elektronische bauelemente S2N7002K 115ma, 60v n-channel enhancement mode power mosfet 08-mar-2010 rev. b page 1 of 3 1 2 3 gate source drain * * gate pretection diode rohs compliant product a suffix of -c specifies halogen & lead-free features low on resistance. fast switching speed. low-voltage drive. easily designed drive circuits. easy to parallel. pb-free package is available. esd protected:2000v device marking: rk maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain C source voltage v dss 60 v gate C source voltage v gss 20 v continuous i d 115 ma drain current pulsed i dp 1 0.8 a continuous i dr 115 ma drain reverse current pulsed i drp 1 0.8 a total power dissipation p d 2 225 mw channel & storage temperature t ch , t stg 150, -55~150 c note: 1. pulse width Q 10 s, duty cycle Q 1%. 2. when mounted on 1x0.75x0.062 inch gl ass epoxy board. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition gate-source leakage current i gss - - 10 a v gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =10 a zero gate voltage drain current i dss - - 1 a v ds =60v, v gs =0v gate threshold voltage v gs(th) 1 1.85 2.5 v v ds = v gs, i d =250 a - - 7.5 v gs =10v, i d =0.5a drain-source on-state resistance* r ds(on) * - - 7.5 v gs =5v, i d =0.05a forward transfer admittance |y fs |* 80 - - ms v ds =10v, i d =0.2a input capacitance c iss - 25 50 output capacitance c oss - 10 25 reverse transfer capacitance c rss - 3.0 5.0 pf v ds =25v v gs =0v f=1mhz turn-on delay time t d(on) * - 12 20 turn-off delay time t d(off) * - 20 30 ns v dd P 30v, v gs =10v i d =200ma, r l =150 , r gs =10 * pulse width Q 300 s, duty cycle Q 1% switching characteristics measurement circuit sot-23 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50 top view a l c b d g h j f k e 1 2 3 1 2 3
elektronische bauelemente S2N7002K 115ma, 60v n-channel enhancement mode power mosfet 08-mar-2010 rev. b page 2 of 3 characteristic curves
elektronische bauelemente S2N7002K 115ma, 60v n-channel enhancement mode power mosfet 08-mar-2010 rev. b page 3 of 3 characteristic curves
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